Silicon-integrated short-wavelength hybrid-cavity VCSEL
نویسندگان
چکیده
منابع مشابه
Silicon-integrated short-wavelength hybrid-cavity VCSEL.
We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field exten...
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We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAsand the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of ...
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We report an electrically pumped hybrid cavity AlGaInAs-silicon long-wavelength VCSEL using a high contrast grating (HCG) reflector on a silicon-on-insulator (SOI) substrate. The VCSEL operates at silicon transparent wavelengths ~1.57 μm with >1 mW CW power outcoupled from the semiconductor DBR, and single-mode operation up to 65 °C. The thermal resistance of our device is measured to be 1.46 K...
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We propose a novel design for multi-wavelength arrays of vertical cavity surface-emitting lasers (VCSELs) using high-contrast gratings (HCGs) as top mirrors. A range of VCSEL cavity wavelengths in excess of 100 nm is predicted by modifying only the period and duty-cycle of the high-contrast gratings, while leaving the epitaxial layer thickness unchanged. VCSEL arrays fabricated with this novel ...
متن کاملHybrid vertical-cavity laser integration on silicon
The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with ...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2015
ISSN: 1094-4087
DOI: 10.1364/oe.23.033634